Thin transparent single-crystal silicon membranes made using a silicon-on-nitride wafer
- Authors
- Lee, Su Hwan; Kim, Dal Ho; Yang, Hee-Doo; Kim, Sung-Jun; Shin, Dong-Won; Woo, Sung Ha; Lee, Hun Joo; Seung, Hyun Min; Lee, Sarig-Keum; Lee, Gon-Sub; Park, Jea-Gun
- Issue Date
- Aug-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SOI; SON; etch-stop; silicon membrane; transparent single-crystal silicon
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.2, pp.579 - 583
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 2
- Start Page
- 579
- End Page
- 583
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178081
- DOI
- 10.3938/jkps.53.579
- ISSN
- 0374-4884
- Abstract
- We have produced various transparent silicon membrane applications, such as solar cells, microstructures, sensors and displays by using silicon-on-nitride (SON) wafers. We first tried to make them by using silicon-on-insulator (SOI) wafers and a buried layer Of SiO2 as an etch-stop layer. However, during the wet-etching process, the buried SiO2 layer did not completely block the potassium hydroxide (KOH) etchant. The silicon membrane eventually formed micro-cracks and the membrane broke along the line of micro-cracks. Because the etching selectivity between Si and SiO2 is only 200 : 1 in 30 % KOH at 80 degrees C, the nanometer-order thickness Of SiO2 is insufficient for a suitable etch-stop layer. We have, therefore, developed a wafer that combines a dielectric etch-stop layer with a SOI wafer and that makes it possible to produce transparent silicon membranes of various thicknesses.
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