Effect of O-2 Gas during Inductively Coupled O-2/Cl-2 Plasma Etching of Mo and HfO2 for Gate Stack Patterning
- Authors
- Jung, Ho Young; Lee, Hag Joo; Kwon, Bong Soo; Park, Jung Ho; Lee, Chiyoung; Ahn, Jinho; Lee, Jaegab; Lee, Nae-Eung
- Issue Date
- Aug-2008
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Keywords
- Mo; HfO2; plasma etching; inductively coupled plasma (ICP); metal gate stack
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.8, pp.6938 - 6942
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 8
- Start Page
- 6938
- End Page
- 6942
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178092
- DOI
- 10.1143/JJAP.47.6938
- ISSN
- 0021-4922
- Abstract
- In this study, we investigated the etching characteristics of Mo and HfO2 single layers and Mo/HfO2 stacked structure for metal electrode/high-k gate stack patterning in O-2-/Cl-2 inductively coupled plasmas and the effects of O-2 addition on the etch rates and etch selectivity of the Mo to the HfO2 layer. By controlling the process parameters such as the O-2/Cl-2 flow ratio, the top electrode power and the do self-bias voltage (V-dc), the Mo/HfO2 etch selectivity as high as congruent to 67 could be obtained. Addition of O-2 gas to the O-2/Cl-2 chemistry improved the Mo/HfO2 etch selectivity because the O-2 gas in a certain flow ratio range reduced the HfO, etching reactions due to less chlorination of Hf but enhanced the Mo etch rate presumably due to effective formation of highly volatile Mo-O-Cl etch by-products.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178092)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.