Process optimization of Ni nanocrystals formation using O2 plasma oxidation to fabricate low-molecular organic nonvolatile memory
- Authors
- Nam, Woo Sik; Lee, Gon-Sub; Seo, Sung Ho; Park, Jea Gun
- Issue Date
- Jul-2008
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium Proceedings, v.1071, pp.147 - 152
- Indexed
- SCOPUS
- Journal Title
- Materials Research Society Symposium Proceedings
- Volume
- 1071
- Start Page
- 147
- End Page
- 152
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178148
- DOI
- 10.1557/proc-1071-f05-21
- ISSN
- 0272-9172
- Abstract
- We fabricated organic nonvolatile memory with a device structure of Al/Alq3 (aluminum tris (8-hydroxyquinoline))/Ni nanocrystals surrounded by NiO/Alq3/Al. We obtained the best bistable switching characteristics at a 30-nm Alq3 thickness, 0.1-?/sec evaporation rate, and 10-nm Ni nanocrystal layer thickness. The electrical behavior of the bistable switching devices was obtained by sweeping the voltage from 0 to 10 V. Our devices showed excellent bistable memory characteristics, such as a Vth of 2 V, Vp of 3 V, Ve of 5 V, and Ion/Ioff ratio of greater than 104. We found that a region of negative differential resistance exists between Vp and Ve.
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