Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method
- Authors
- Lee, Woo Gyo; Kim, Yong Kyun; Kim, Jong Kyung; Starzhinskiy, Nicolai; Ryzhikov, Vladimir; Grinyov, Boris
- Issue Date
- Jun-2008
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- ZnSe; semiconductor scintillator; absorption; emission; afterglow
- Citation
- JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, pp.579 - 581
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY
- Start Page
- 579
- End Page
- 581
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178541
- DOI
- 10.1080/00223131.2008.10875921
- ISSN
- 0022-3131
- Abstract
- Zinc selenide crystals were grown in graphite crucibles by the Bridgman-Stockbarger method in a vertical compression furnace under argon pressure of 5x10(6) Pa. From the absorption spectra, the band gap energies of the ZnSe single crystals were calculated by a linear fitting process. The maximum wavelength of the emission spectrum of the ZnSe:Te,O scintillator was 630 nm, which was well matched with the response wavelength of the Si photodiode. The energy resolution of the ZnSe:Te,0 scintillator was 11.9% when it was exposed to (CS)-C-137 gamma-ray. Its size was 10 x 10 x 1 mm(3). The afterglow level of the ZnSe:Te,O scintillator after 5 ms was 0.023%. The relative light output of the ZnSe:Te,O scintillator was 2.167 times higher than CsI:Tl. The luminescence decay time of the ZnSe:Te,O scintillator has two exponential components with 27 and 84 mu s time constant.
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