Surface passivation effect on CZT-metal contact
- Authors
- Park, Se Hwan; Ha, Han Soo; Cho, Yoon-Ho; Kim, Han Soo; Kang, Sang Mook; Kim, Yong Kyun; Kim, Jong Kyung
- Issue Date
- Jun-2008
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- cadmium zinc telluride (CZT); leakage current; metal-semiconductor contact; surface passivation
- Citation
- IEEE Transactions on Nuclear Science, v.55, no.3, pp 1547 - 1550
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Nuclear Science
- Volume
- 55
- Number
- 3
- Start Page
- 1547
- End Page
- 1550
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178580
- DOI
- 10.1109/TNS.2007.914934
- ISSN
- 0018-9499
1558-1578
- Abstract
- The process of cadmium zinc telluride (CZT) surface passivation is very important to reduce the leakage current of the detector and to improve the detector performance. NH4/H2O2 solution was identified as an effective passivation agent for CZT. We fabricated a CZT planar detector and measured the detector performances before and after the NH4/H2O2 passivation. For the first time, the passivation effect on CZT-metal contact was measured. The depth profile of the chemical composition of metal contact was measured with AES to understand the change of the CZT detector performance with passivation.
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