Characteristics of low-kappa SiOC films deposited via atomic layer deposition
- Authors
- Lee, Jaemin; Jang, Woochool; Kim, Hyunjung; Shin, Seokyoon; Kweon, Youngkyun; Lee, Kunyoung; Jeon, Hyeongtag
- Issue Date
- Jan-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Octamethylcyclotetrasiloxane; Atomic layer deposition; Low-dielectric constant; Silicon oxycarbide; Thin film
- Citation
- THIN SOLID FILMS, v.645, pp.334 - 339
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 645
- Start Page
- 334
- End Page
- 339
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17876
- DOI
- 10.1016/j.tsf.2017.10.045
- ISSN
- 0040-6090
- Abstract
- The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O-2, Ar, H-2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 degrees C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H-2 plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O-2 plasma yielded carbon free SiO2 films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H-2 plasma was used as the reactant gas, pores within the films with loose structures and SieC bonds served to lower the dielectric constant. As a result, Ar and H-2 plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100 degrees C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components.
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