Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors
- Authors
- Ok, Kyung-Chul; Lim, Jun-Hyung; Jeong, Hyun-Jun; Lee, Hyun-Mo; Rim, You Seung; Park, Jin-Seong
- Issue Date
- Jan-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- zinc-oxynitride; photochemical reaction; low-temperature process; thin-film transistors; flexible electronics
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.3, pp.2709 - 2715
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 3
- Start Page
- 2709
- End Page
- 2715
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17893
- DOI
- 10.1021/acsami.7b16046
- ISSN
- 1944-8244
- Abstract
- Photochemical reactions in inorganic films, which can, be promoted by the addition, of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy even at low temperatures.: We performed thermal-induced, deep ultraviolet, based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar-variations, in the nanostructures with phase transformation and densification. The separated; Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was-stabilized remarkably by the-reduction Of oxygen defects and IT;the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm(2) V-1 s(-1).
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