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Resistance switching characteristics in Li-doped NiO
- Authors
- Jung, Kyooho; Choi, Joonhyuk; Kim, Yongmin; Im, Hyunsik; Seo, Sunae; Jung, Ranju; Kim, DongChul; Kim, Jin Soo; Park, Bae Ho; Hong, Jin Pyo
- Issue Date
- Feb-2008
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.103, no.3, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 103
- Number
- 3
- Start Page
- 1
- End Page
- 4
- ISSN
- 0021-8979
- Abstract
- We investigated the effects of lithium (Li)-doping on bi-stable resistance switching in polycrystalline NiO film in the temperature range of 10 K < T < 300 K. Compliance-dependent resistive switching transport revealed some distinctive and interesting features not observed in undoped NiO films previously studied. An analysis of the temperature dependence of the resistive switching transport showed that Li-doping could modify the thermal properties of the off-state leading to a stable on/off switching operation. It is clearly shown that doping Li in NiO can improve NiO's retention properties and stability of on/off switching voltages.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)