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Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory
- Authors
- Park, In-Sung; Lee, Joo-Ho; Lee, Sunwoo; Ahn, Jinho
- Issue Date
- Nov-2007
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- resistance switching effect; resistance change random access memory; HfO2; atomic layer deposition; metal electrode
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.7, no.11, pp.4139 - 4142
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 7
- Number
- 11
- Start Page
- 4139
- End Page
- 4142
- ISSN
- 1533-4880
- Abstract
- The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)