Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Oxidant effect on resistance switching characteristics of HfO2 film grown atomic layer deposition
- Authors
- Park, In-Sung; Lee, Jooho; Yoon, Seungki; Chung, Keum Jee; Lee, Sunwoo; Park, Jungho; Kim, Chang Kyung; Ahn, Jinho
- Issue Date
- Oct-2007
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Transactions, v.11, no.7, pp 61 - 66
- Pages
- 6
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 11
- Number
- 7
- Start Page
- 61
- End Page
- 66
- ISSN
- 1938-5862
1938-6737
- Abstract
- The resistance switching phenomena of Mo/HfO2/Mo resistors were investigated with HfO2 films formed by using different oxidants. HfO2 films were atomic layer deposited using H2O, D 2O, and O3 as oxidants, respectively. Repeatable and reliable resistance switching behaviors were obtained with H2O- and D2O-processed HfO2 films whereas O3-processed film showed only insulating breakdown. The depth profiles such as carbon in H2O- and O3-processed HfO2 films were probed using auger electron spectroscopy. The carbon content detected near the top interface of H2O-processed HfO2 film is helpful to appear the resistance switching behavior.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)