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Plasma etching for the application to low-k dielectrics devices
- Authors
- Lee, J.W.; Kim, H.W.; Han, J.W.; Kim, M.-S.; Yoo, B.-D.; Kim, M.-H.; Lee, C.-H.; Lee, C.H.; Lim, C.H.; Hwang, S.-K.; Lee, C.; Chung, D.J.; Park, S.-G.; Lee, S.G.; O, B.H.; Kim, J.; Chang, S.P.; Lee, S.H.; Chai, S.-Y.; Lee, W.I.; Park, S.-E.; Kim, K.; Choi, D.-K.; Chung, Chin Wook
- Issue Date
- Sep-2007
- Publisher
- Trans Tech Publications Ltd.
- Keywords
- ICP; Low-k material; Photoresist
- Citation
- Materials Science Forum, v.555, pp 113 - 118
- Pages
- 6
- Indexed
- SCOPUS
- Journal Title
- Materials Science Forum
- Volume
- 555
- Start Page
- 113
- End Page
- 118
- ISSN
- 0255-5476
1662-9752
- Abstract
- We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)