Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
- Authors
- Moon, Hui Chang; Kim, Seong Je; Shim, Tae Hun; Park, Jea Gun
- Issue Date
- Sep-2007
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.102, no.6, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 102
- Number
- 6
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179666
- DOI
- 10.1063/1.2784079
- ISSN
- 0021-8979
- Abstract
- We investigated through a theoretical simulation how the phonon-limited electron mobility in both (110)- and (100)-oriented ultrathin-body (UTB) silicon-on-insulator (SOI) n-metal-oxide-semiconductor field-effect transistors (MOSFETs) depends on the top silicon thickness within a range from 20 to 2 nm. No electron mobility enhancement was observed in (110) UTB SOI n-MOSFETs when the top silicon thickness was around 5 nm, unlike in (100) UTB n-MOSFETs. Thus, electron mobility in (110) UTB SOI n-MOSFETs decreased with top silicon thickness, particularly in the range below 10 nm. We attributed the electron mobility degradation in (110) UTB SOI n-MOSFETs within the top silicon thickness range below 10 nm to a decrease in the effective width of the inversion layer and an increase in intravalley acoustic phonon scattering, rather than to less carrier repopulation due to less band splitting between two- and fourfold valleys.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.