Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide
- Authors
- Seol, Young Gog; Lee, JG; Lee, Nae Eun; Lee, Sang Seol; Ahn, Jinho
- Issue Date
- Apr-2007
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- organic thin film transistor; P3HT; Ni electroplating; flexible devices
- Citation
- THIN SOLID FILMS, v.515, no.12, pp.5065 - 5069
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 515
- Number
- 12
- Start Page
- 5065
- End Page
- 5069
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180295
- DOI
- 10.1016/j.tsf.2006.10.018
- ISSN
- 0040-6090
- Abstract
- The electroplating of the gate electrode on a flexible polyimide (PI) substrate was successfully applied to the fabrication of inverted-staggered poly(3-hexylthiophene) (P3HT) organic thin film transistors (OTFTs). The Ni gate electrode was electroplated through patterned negative photo-resist (KMPR) masks onto Cu (seed)/Cr (adhesion) layers that had been sputter-deposited on O-2-plasma-treated PI substrates. The electrical measurements of the fabricated OTFTs with the SiO2 gate insulator indicated non-ideal output characteristics, which are similar to the model of electrical transport by a space-charge limited current (SCLC). The use of a poly(4-vinyl phenol) (PVP) and SiO2/PVP bilayer gate dielectric produced output characteristics that were closer to the ideal TFT behavior but led to a lower effective mobility and on/off current (I-on/I-off).
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