Field effect transistor with ZnS active layer on ITO/glass substrate
- Authors
- Back, In Jae; Gong, Su-Cheol; Lim, Hun-Seoung; Shin, Ik-Sub; Kuk, Seoun-Woo; Kim, In-Hoe; Jeon, Hyeongtag; Park, Hyung-Ho; Chang, Ho Jung
- Issue Date
- Jan-2007
- Publisher
- Trans Tech Publications Ltd
- Keywords
- ALD; Mobility; Organic-inorganic field effect transistor; PVP; ZnS active layer
- Citation
- Materials Science Forum, v.544-545, pp.753 - 756
- Indexed
- SCOPUS
- Journal Title
- Materials Science Forum
- Volume
- 544-545
- Start Page
- 753
- End Page
- 756
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180540
- DOI
- 10.4028/www.scientific.net/MSF.544-545.753
- ISSN
- 0255-5476
- Abstract
- The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.
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