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Formation of the electron spectrum of ZnSe-based scintillators under annealing in zinc vapor
- Authors
- Kim, Y. K.; Kim, J. K.; Lee, W. G.; Starzhinskiy, N.; Ryzhikov, V.; Katrunov, K.; Gal'chinetskii, L.
- Issue Date
- Dec-2006
- Publisher
- 한국물리학회
- Keywords
- ZnSe; scintillator; transmission spectrum; absorption band; annealing
- Citation
- Journal of the Korean Physical Society, v.49, no.6, pp 2282 - 2285
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 49
- Number
- 6
- Start Page
- 2282
- End Page
- 2285
- ISSN
- 0374-4884
1976-8524
- Abstract
- The effects of an aftergrowth annealing of ZnSe(IVD) scintillators of two types in a Zn vapor have been studied by using a complex optical investigation. As a result of such an annealing, there arises an absorption band with a maximum at E = 2.35 eV. The results of the annealing in zinc indicate that the luminescence peak at 625 nm induced by a photoexcitation within the absortion band and an absorption on the free charge carriers in the IR spectral range are inherent in both types of crystals. The carrier concentration can be calculated up to values on the order of 2 x 10(16) cm(-3).
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Related Researcher
- Kim, Yong Kyun
- COLLEGE OF ENGINEERING (DEPARTMENT OF NUCLEAR ENGINEERING)