Efficient fabrication and characterization of cobalt nanoparticles embeddedin metal/oxide/semiconductor structures for the application of nonvolatile memory
- Authors
- Yang, Jung Yup; Yoon, Kap Soo; Choi, Won Joon; Do, Young Ho; Kim, Ju Hyung; Kim, Chae Ok; Hong, Jin Pyo
- Issue Date
- Nov-2006
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2636 - 2639
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 24
- Number
- 6
- Start Page
- 2636
- End Page
- 2639
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180776
- DOI
- 10.1116/1.2366612
- ISSN
- 1071-1023
- Abstract
- Metal-oxide-semiconductor (MOS) capacitors with Co nanoparticles (Co NPs) were successfully fabricated by utilizing an external laser irradiation method for the application of nonvolatile memory. Experimental images of cross-sectional transmission electron microscopy showed that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 layer. Capacitance-voltage measurements of Pt/SiO2/Co NPs/SO2 on p-type Si (100) substrate certainly exhibited typical MOS behavior with a flatband voltage shift of 1.1 V. In addition, the charge retention characteristics of MOS capacitors with the Co NP were investigated using Capacitance-time measurements. The present results indicate that their unique laser process gives rise to a possible promise for the efficient formation or insertion of metal NPs inside the MOS structures.
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