Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF co-sputtering method
- Authors
- Lee, Jonghyun; Choi, Wonjoon; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschang-Uh; Cheong, Hyeonsik
- Issue Date
- Sep-2006
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO; thin film; PL; bandgap
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1126 - 1129
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 49
- Number
- 3
- Start Page
- 1126
- End Page
- 1129
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181032
- ISSN
- 0374-4884
- Abstract
- Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF co-sputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of similar to 370 nm at room temperature.
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