Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots
- Authors
- Kim, J. H.; Woo, Jun Taek; Kim, Tate; Yoo, Keon Ho; Lee, Y. T.
- Issue Date
- Sep-2006
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.100, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 100
- Number
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181068
- DOI
- 10.1063/1.2353783
- ISSN
- 0021-8979
- Abstract
- The microstructural properties and the shape of an InAs/GaAs array grown by molecular beam epitaxy were studied using transmission electron microscopy (TEM) measurements, and the interband transitions were investigated by using temperature-dependent photoluminescence (PL) measurements. The shape of the InAs quantum dots (QDs) on the basis of the cross-sectional bright-field TEM image was modeled to be a convex-plane lens. The electronic subband energies and the wave functions were numerically calculated by using a three-dimensional finite-difference method, taking into account strain effects. The excitonic peaks corresponding to interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the multiple-stacked QDs, as determined from the PL spectra, were in reasonable agreement with the (E-1-HH1) interband transition energies obtained from the results of the numerical calculations.
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