Organic bi-stable device fabricated with a sandwich structure of Al/AlDCN/Al nano-crystals surrounded by amorphous Al2O3/AlDCN/Al

Abstract

An organic bi-stable device (OBD) was developed and exhibited non-volatile memory characteristics with a current conduction bi-stability of similar to 1 x 10(2) and a threshold voltage of 2.8 V for the writing state. The OBD was fabricated With the following structure: aluminum (Al) layer/conductive organic layer/Al nano-crystals surrounded by amorphous Al2O3/conductive organic layer/Al layer, where the organic material was 2 amino-4, 5-imidazoledicarbonitrile (AIDCN). The Al nano-crystals surrounded by the amorphous Al2O3 were several nanometers in size, with a density of similar to 1 x 10(11)/cm(2). The OBD could only achieve current conduction bi-stability with an Al evaporation rate of loss than 0.3 angstrom/s.