Resistive switching characteristics of unique binary-oxide MgOx films
- Authors
- Jeong, Koo Woong; Do, Young Ho; Yoon, Kap Soo; Kim, Chae Ok; Hong, Jin Pyo
- Issue Date
- Jun-2006
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- resistance random access memory; non-volatile memory; resistance switching property
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1501 - 1504
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 48
- Number
- 6
- Start Page
- 1501
- End Page
- 1504
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181370
- ISSN
- 0374-4884
- Abstract
- Novel MgOx thin films for nonvolatile memory applications were deposited on silicon substrates using a reactive RF magnetron sputtering system at room temperature, and were then annealed with a rapid thermal annealing process in a N-2 atmosphere at various annealing temperatures. Current-voltage (I-V) and X-ray diffraction measurements were carried out to analyze the resistance switching phenomenon and the structural properties of the as-grown and the annealed MgOx thin films, respectively. Typical I-V curves of the annealed samples clearly exhibited reproducible resistance switching behaviors for the on-off states with an improved stability.
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