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Study of ashing for low-k dielectrics using the N-2/O-2 ferrite-core inductively coupled plasmas
- Authors
- Kim, Hyoun Woo; Myung, Ju Hyun; Kim, Nam Ho; Lee, Han Sup; Park, Se-Geun; Lee, Jae Gab; Chung, Chin Woo; Park, Wan Jae; Kang, Chang-Jin; Yoo, Chung-Gon; Ko, Kwang-Hyuk; Woo, Je-Ho; Choi, Sang-Don; Choi, Dae-Kyu
- Issue Date
- May-2006
- Publisher
- Elsevier Sequoia
- Keywords
- plasma processing and deposition; low-k material; ferrite-core
- Citation
- Thin Solid Films, v.506, pp 222 - 224
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 506
- Start Page
- 222
- End Page
- 224
- ISSN
- 0040-6090
- Abstract
- We have studied the characteristics of photoresist (PR) ashing using N-2/O-2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O-2/(O-2+N-2) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate, obtaining the PR ash rate and the PR to low-k materials etch selectivity, respectively, of 15,000 angstrom/min and 180. Fourier transform infrared spectroscopy and HF etch test coincidentally indicated that the ash damage to the low-k material decreased with decreasing the O-2/(O-2+N-2) gas flow ratio.
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)