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Remote plasma atomic layer deposition of HfO2 thin films using the alkoxide precursor Hf(mp)(4)
- Authors
- Kim, Seokhoon; Kim, Jinwoo; Choi, Jihoon; Kang, Hyunseok; Jeon, yeongtag; Cho, Wontae; An, Ki-Seok; Chung, Taek-Mo; Kim, Yunsoo; Bae, Choelhwyi
- Issue Date
- Apr-2006
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.6, pp.G200 - G203
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 9
- Number
- 6
- Start Page
- G200
- End Page
- G203
- ISSN
- 1099-0062
- Abstract
- Hafnium 3-methyl-3-pentoxide precursor, Hf(mp)(4), was newly synthesized as an alkoxide precursor and used to deposit HfO2 films by remote plasma atomic layer deposition (ALD). The characteristics of the HfO2 films were compared with the films deposited using tetrakis(diethylamido)hafnium [Hf(NEt2)(4)] which is used frequently for ALD processes. The HfO2 films deposited with the Hf(mp)(4) had a well-controlled rate of deposition at low temperatures and maintained a low amount of carbon contamination. In addition, the HfO2 films deposited by using Hf(mp)(4) exhibited a higher phase transition temperature and lower leakage current densities than those of HfO2 films deposited using Hf(NEt2)(4).
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)