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Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films
- Issue Date
- Jan-2006
- Publisher
- Electrochemical Society, Inc.
- Citation
- Electrochemical and Solid-State Letters, v.9, no.3, pp F13 - F15
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Volume
- 9
- Number
- 3
- Start Page
- F13
- End Page
- F15
- ISSN
- 1099-0062
1944-8775
- Abstract
- The effect of remote plasma nitridation (RPN) pretreatment on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films was investigated. An atomic change in the nitrogen's partial local coordination structure in the vicinity of Hf-O-Si was closely associated with the structural and electrical characteristics of the HfO2 films. The HfO2 film pretreated with RPN retained its amorphous structure after rapid thermal annealing at 600 S C for 30 s. The RPN pretreated-HfO2 film also showed significant enhancement of the gate capacitance and retained low leakage current densities (6.70 x 10(-8) A cm(-2) at vertical bar V-G - V-FB vertical bar = 2 V).
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