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The Formation of Dipole to Modulate Flatband Voltage (VFB) using ALD Al2O3 on the HfO2-based Si and Ge MOS Devices
- Authors
- 최창환
- Issue Date
- 25-Jan-2022
- Publisher
- UNIST, KSIA, COSAR
- Citation
- 한국반도체학술대회
- Conference Name
- 한국반도체학술대회
- Place
- 강원도 하이원 그랜드 호텔
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)