High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
- Authors
- Cho, Min Hoe; Choi, Cheol Hee; Kim, Min Jae; Hur, Jae Seok; Kim, Taikyu; Jeong, Jae Kyeong
- Issue Date
- Apr-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- oxide semiconductor; nanolaminate; heterostructure; atomic layer deposition; thin-film transistor; high mobility; low operation voltage; high-κ dielectric
- Citation
- ACS APPLIED MATERIALS&INTERFACES, v.15, no.15, pp.19137 - 19151
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS&INTERFACES
- Volume
- 15
- Number
- 15
- Start Page
- 19137
- End Page
- 19151
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/186007
- DOI
- 10.1021/acsami.3c00038
- ISSN
- 1944-8244
- Abstract
- An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single dyad consists of a 2-nm-thick confinement layer (CL) (In0.84Ga0.16O or In0.75Zn0.25O), and a barrier layer (BL) (Ga2O3) was designed to obtain superior electrical performance in thin-film transistors (TFTs). Within the oxide NL structure, multiple-channel formation was demonstrated by a pile-up of free charge carriers near CL/BL heterointerfaces in the form of the so-called quasi-two-dimensional electron gas (q2DEG), which leads to an outstanding carrier mobility (μFE) with band-like transport, steep gate swing (SS), and positive threshold voltage (VTH) behavior. Furthermore, reduced trap densities in oxide NL compared to those of conventional oxide single-layer TFTs ensures excellent stabilities. The optimized device with the In0.75Zn0.25O/Ga2O3 NL TFT showed remarkable electrical performance: μFE of 77.1 ± 0.67 cm2/(V s), VTH of 0.70 ± 0.25 V, SS of 100 ± 10 mV/dec, and ION/OFF of 8.9 × 109 with a low operation voltage range of ≤2 V and excellent stabilities (ΔVTH of +0.27, −0.55, and +0.04 V for PBTS, NBIS, and CCS, respectively). Based on in-depth analyses, the enhanced electrical performance is attributed to the presence of q2DEG formed at carefully engineered CL/BL heterointerfaces. Technological computer-aided design (TCAD) simulation was performed theoretically to confirm the formation of multiple channels in an oxide NL structure where the formation of a q2DEG was verified in the vicinity of CL/BL heterointerfaces. These results clearly demonstrate that introducing a heterojunction or NL structure concept into this atomic layer deposition (ALD)-derived oxide semiconductor system is a very effective strategy to boost the carrier-transporting properties and improve the photobias stability in the resulting TFTs.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/186007)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.