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Low-frequency noise characteristics of indium-gallium-zinc oxide ferroelectric thin-film transistors with metal-ferroelectric-metal-insulator-semiconductor structureopen access
- Issue Date
- Apr-2023
- Publisher
- American Institute of Physics Inc.
- Citation
- Applied Physics Letters, v.122, no.15, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 122
- Number
- 15
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
- Abstract
- We investigate the low-frequency noise characteristics of indium-gallium-zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (AM/AF's). It is revealed that the noise generation mechanism differs depending on the operation region [low and high drain current (ID) regions] and AM/AF. Excess noise in the low ID region is observed in the MFMIS FeTFTs with AM/AF's of 4 and 6 due to carrier mobility fluctuations. In the high ID region, the carrier number fluctuation generates the 1/f noise of the devices regardless of the AM/AF.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)