Achieving high carrier mobility in IGZO transistors by catalytic metal assisted crystallization
- Authors
- Shin, Yeonwoo; Lee, Jiwon; Jeong, Jae Kyeong
- Issue Date
- Dec-2017
- Publisher
- International Display Workshops
- Keywords
- High mobility; Indium gallium zinc oxide; Low-temperature crystallization; Thin-film transistor
- Citation
- Proceedings of the International Display Workshops, v.1, pp.407 - 409
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 1
- Start Page
- 407
- End Page
- 409
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18609
- ISSN
- 1883-2490
- Abstract
- The transition metal catalytic layer has facilitated the low-temperature crystallization of amorphous indium gallium zinc oxide semiconductor. Subsequently, the significant enhancement in terms of device performance was observed for the crystallized IGZO transistor at a low annealing temperature of 300 °C: the field-effect mobility increased up to 54.0 cm2/Vs. © 2017 Proceedings of the International Display Workshops. All rights reserved.
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