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All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel
- Authors
- Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong
- Issue Date
- May-2023
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- HfO2-based ferroelectric memory; IGZO ferroelectric thin-film transistors (FeTFT); double-gate FeTFT
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.749 - 752
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 44
- Number
- 5
- Start Page
- 749
- End Page
- 752
- ISSN
- 0741-3106
- Abstract
- Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide (α-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFTbottom) and top conventional TFT (TFTtop) are combined into a single device that shares the α-IGZO channel and source/drain. Through the separation of read (by TFTtop) and program/erase (by FeTFTbottom) operations, it is confirmed that wide memory window (MW) of ~5V is obtained with an MW amplification and read disturbance can be significantly improved. Furthermore, it is verified that faster program/erase speeds are achievable by modulating the gate voltage of TFTtop, leading to the improved endurance characteristics.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)