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High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradationsopen access
- Issue Date
- Sep-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Active-matrix organic light-emitting display (AMOLED); pixel circuit; amorphous-indium-gallium-zinc-oxide TFT (a-IGZO TFT); compensation; high aperture ratio
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.372 - 377
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 5
- Number
- 5
- Start Page
- 372
- End Page
- 377
- ISSN
- 2168-6734
- Abstract
- In this paper, we propose a novel voltage programmed pixel circuit based on amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for active-matrix organic light-emitting displays. Through the extensive simulation work based on a-IGZO TFT and OLED models, we confirm that the proposed pixel circuit can compensate for threshold voltage variations of TFTs and OLED degradation over wide dynamic range (similar to 10(4)) of OLED current as well as achieve a high pixel aperture ratio with the suppressed OLED current error rate below 9%.
- Appears in
Collections - 서울 공과대학 > 서울 화학공학과 > 1. Journal Articles
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Related Researcher
- Kim, Do Hwan
- COLLEGE OF ENGINEERING (DEPARTMENT OF CHEMICAL ENGINEERING)