Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Applicationopen access
- Authors
- Lee, Kitae; Kim, Sihyun; Lee, Jong-Ho; Kwon, Daewoong
- Issue Date
- Nov-2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ferroelectric-gate field-effect transistor (FeFET); Ferroelectric devicesone transistor dynamic random-access memory (1T-DRAM); endurance characteristics of FeFET; recess channel
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.10, pp.13 - 18
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 10
- Start Page
- 13
- End Page
- 18
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188922
- DOI
- 10.1109/JEDS.2021.3127955
- ISSN
- 21686734
- Abstract
- The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on the FeFET with recessed channel (RC-FeFET) is identified. By evaluating electric field (e-field) across interlayer (IL) and memory window (MW), the improvements of program/erase cycling endurance and read current sensing margin (RSM) are verified in the RC-FeMFET. Moreover, considering program voltage (V-W) and polarization switching time (tau(p)), the guide line of the RC-FeMFET design is provided in terms of e-field across IL and MW for 1T-DRAM applications.
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