Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET
- Authors
- Shin, Wonjun; Bae, Jong-Ho; Kim, Sihyun; Lee, Kitae; Kwon, Dongseok; Park, Byung-Gook; Kwon, Daewoong; Lee, Jong-Ho
- Issue Date
- Nov-2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Endurance; ferroelectric FET (FeFET); high-pressure annealing (HPA); low-frequency noise (LFN); wake-up
- Citation
- IEEE ELECTRON DEVICE LETTERS
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188923
- DOI
- 10.1109/LED.2021.3127175
- ISSN
- 0741-3106
- Abstract
- In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment are investigated. The origin of 1/f noise in the FeFET without HPA is changed from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to the remote phonon scattering from the polarized HZO. Also, Hooge's parameter is increased by the program/erase (P/E) cycling-induced stress. On the contrary, only the correlated mobility fluctuation is increased after the wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA shows robustness to P/E cycling-induced stress after the wake-up, showing superb endurance performance.
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