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Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET

Authors
Shin, WonjunBae, Jong-HoKim, SihyunLee, KitaeKwon, DongseokPark, Byung-GookKwon, DaewoongLee, Jong-Ho
Issue Date
Nov-2021
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Endurance; ferroelectric FET (FeFET); high-pressure annealing (HPA); low-frequency noise (LFN); wake-up
Citation
IEEE ELECTRON DEVICE LETTERS
Indexed
SCIE
SCOPUS
Journal Title
IEEE ELECTRON DEVICE LETTERS
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188923
DOI
10.1109/LED.2021.3127175
ISSN
0741-3106
Abstract
In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment are investigated. The origin of 1/f noise in the FeFET without HPA is changed from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to the remote phonon scattering from the polarized HZO. Also, Hooge's parameter is increased by the program/erase (P/E) cycling-induced stress. On the contrary, only the correlated mobility fluctuation is increased after the wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA shows robustness to P/E cycling-induced stress after the wake-up, showing superb endurance performance.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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