Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
- Authors
- Kim, Min-Won; Kim, Ji-Hun; Kim, Hyeon-Jun; Seo, Jeong-Woo; Park, Jea-Gun; Hong, Jin Pyo
- Issue Date
- Dec-2022
- Publisher
- IOP PUBLISHING LTD
- Keywords
- tunnel field-effect transistor; charge plasma; Ge condensation; silvaco atlas
- Citation
- NANOTECHNOLOGY, v.34, no.9, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 34
- Number
- 9
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189071
- DOI
- 10.1088/1361-6528/aca618
- ISSN
- 0957-4484
- Abstract
- Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the replacement of metal-oxide-semiconductor field-effect transistors owing to their extremely low off-current and fast switching suitable for low-power-consumption applications. However, conventional doped TFETs have the disadvantage of introducing undesirable random dopant fluctuation (RDF) events, which cause a large variance in the threshold voltage and ambipolar leakage current at negative gate voltages. In this study, a simple approach for charge plasma-based doping-less TFETs (DL-TFETs), including the Ge/Si bilayer frame, which affects the RDF and low on-current issues, was developed by the commercially available Silvaco Atlas device simulator. The use of the Ge/Si bilayer enhances the on-current and point subthreshold swing to 1.4 x 10(-6) A and 16.6 mV dec(-1), respectively. In addition, the dependencies of the Ge/Si junction boundary position and Ge content were examined systematically to attain a firm understanding of the electrical features in DL-TFETs.
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