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Capacitive Neural Network Using Charge-Stored Memory Cells for Pattern Recognition Applications

Authors
Kwon, DaewoongChung, In-Young
Issue Date
Mar-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Neuromorphic systemsynaptic devicecapacitive neural network
Citation
IEEE ELECTRON DEVICE LETTERS, v.41, no.3, pp.493 - 496
Indexed
SCIE
SCOPUS
Journal Title
IEEE ELECTRON DEVICE LETTERS
Volume
41
Number
3
Start Page
493
End Page
496
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189317
DOI
10.1109/LED.2020.2969695
ISSN
0741-3106
Abstract
We report on capacitive neural network using charge-stored memory cells. Threshold voltage ( ${V}_{\text {th}}$ )-adjusted memory cells are used as capacitors with different capacitances in the synapse array. The capacitor array detects output voltage difference induced by capacitive coupling from input voltages when outputting the data of weighted memory cells in a read operation. Thus, power consumption is significantly improved. To verify the validity of the capacitor synapse array, MNIST simulations are performed. Though misclassification rate is slowly saturated compared to that of the linear synapse because of the non-linear weights, blow 1 % difference in misclassification rate is successfully obtained.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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