Low temperature (< 150? Text Color) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application
- Authors
- Wang, Zeli; Xu, Hongwei; Zhang, Yuanju; Cho, Hyeon Cheol; Jeong, Jae Kyeong; Choi, Changhwan
- Issue Date
- Dec-2022
- Publisher
- ELSEVIER
- Keywords
- Amorphous-indium-gallium-tin-oxide (a-In-Ga-sn-O); Thin-film NAND flash memory; Atomic layer deposition (ALD); Light-assisted erasing; Charge trapping
- Citation
- APPLIED SURFACE SCIENCE, v.605, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 605
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189576
- DOI
- 10.1016/j.apsusc.2022.154614
- ISSN
- 0169-4332
- Abstract
- This study first attempted to fabricate and study the properties of flash memory devices using amorphous In-Ga-sn-O (IGTO) material as a channel material. Compared with devices using amorphous In-Ga-Zn-O (IGZO) ma-terial as a channel material, amorphous IGTO flash memory devi ces exhibit improved memory characteristics with faster write/erase speeds (10 mu s), improved program/erase (P/E) efficiency, lower sub-threshold swing (SS), higher field effect mobility (mu FE) and enhanced on-current to off-current ratio (ION/IOFF). The erasing method and possible mechanism to enhance erasing efficiency utilizing light-assisted negative gate biasing were discussed in this paper. The photo transition is closely related to oxygen vacancy, therefore, the light-assisted approach photo -ionizing oxygen vacancies to generate holes could be a way to achieve erasing under the negative gate bias. Compared with amorphous IGZO thin film, amorphous IGTO thin film has a lower electron affinity and more oxygen vacancies that can provide more holes. In the P/E characterization under different circumstances, amorphous IGTO devices had a wider memory window (MW), and longer retention behaviors. These properties broaden the applications of modern flash device circuits and serve as a reference for future advances in flash storage technology.
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