Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
- Authors
- Kwon, Daewoong; Cheema, Suraj; Shanker, Nirmaan; Chatterjee, Korok; Liao, Yu-Hung; Tan, Ava J; Hu, Chenming; Salahuddin, Sayeef
- Issue Date
- Jun-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ultrathin; ferroelectric; negative capacitance FET; PFM analysis
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.6, pp.993 - 996
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 6
- Start Page
- 993
- End Page
- 996
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189913
- DOI
- 10.1109/LED.2019.2912413
- ISSN
- 0741-3106
- Abstract
- We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thickZr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness, a subthreshold swing (SS) steeper by more than 20 mV/decade and larger than 10X reduction in the OFF current (I-OFF) is observed at 30-nm channel length at constant I-ON. On the other hand, at matched I-OFF, the NCFET provides a larger ON current at constant V-DD. Our results indicate that the beneficial characteristic offered by the NCFETs can be obtained at scaled channel lengths, while using oxide layers whose thickness is comparable to the high-K oxide layer used in ultra-scaled nodes.
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