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Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory
- Issue Date
- Mar-2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Switches; Tunneling; Electrodes; Junctions; Pulse measurements; Iron; Creep; Ferroelectric tunnel junction (FTJ); Ferroelectric devices; Scaling effects; Defect-induced polarization switching
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.323 - 326
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 42
- Number
- 3
- Start Page
- 323
- End Page
- 326
- ISSN
- 0741-3106
- Abstract
- The scaling effects of ferroelectric tunnel junction (FTJ) memory are investigated by evaluating remanent polarization (P-r), coercive field (E-c), and polarization switching speed. Through the analysis on dc tunneling currents and frequency responses of E-c and P-r for FTJs with various sizes, it is found that polarization switching mechanism (domain nucleation limit) is not changed by the width reduction. However, by the length scaling, domain wall spreading-limited switching becomes dominant by process-induced damaged edge regions, leading to the larger P-r and the faster switching speed.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)