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Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory

Authors
Lee, KitaeKim, SihyunLee, Jong-HoPark, Byung-GookKwon, Daewoong
Issue Date
Mar-2021
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Switches; Tunneling; Electrodes; Junctions; Pulse measurements; Iron; Creep; Ferroelectric tunnel junction (FTJ); Ferroelectric devices; Scaling effects; Defect-induced polarization switching
Citation
IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.323 - 326
Indexed
SCIE
SCOPUS
Journal Title
IEEE ELECTRON DEVICE LETTERS
Volume
42
Number
3
Start Page
323
End Page
326
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190332
DOI
10.1109/LED.2021.3052306
ISSN
0741-3106
Abstract
The scaling effects of ferroelectric tunnel junction (FTJ) memory are investigated by evaluating remanent polarization (P-r), coercive field (E-c), and polarization switching speed. Through the analysis on dc tunneling currents and frequency responses of E-c and P-r for FTJs with various sizes, it is found that polarization switching mechanism (domain nucleation limit) is not changed by the width reduction. However, by the length scaling, domain wall spreading-limited switching becomes dominant by process-induced damaged edge regions, leading to the larger P-r and the faster switching speed.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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