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Synthesis of Superior-Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition
- Issue Date
- May-2023
- Keywords
- Ideal reaction; Indium gallium zinc oxide (IGZO); Plasma enhanced atomic layer deposition (PEALD); Thin-Film Transistors (TFTs); Ultra-high mobility
- Citation
- Digest of Technical Papers - SID International Symposium, v.54, no.1, pp 1806 - 1809
- Pages
- 4
- Indexed
- SCOPUS
- Volume
- 54
- Number
- 1
- Start Page
- 1806
- End Page
- 1809
- ISSN
- 0097-966X
2168-0159
- Abstract
- Based on moderating the reaction energy of plasma enhanced atomic layer deposition (PEALD), we fabricated a superior-performance InGaZnO transistor with the ultra-high field effect mobility over 100 cm2/Vs, absolute threshold voltage under 0.5 V, and subthreshold swing lower than 100 mV/decade. This study will be powerful basic of synthesizing the ALD-based oxide semiconductor for scaling down such as 3D integration applications.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)