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High-Performance Indium-Gallium Oxide Thin-Film-Transistors via Plasma-Enhanced Atomic-Layer-Deposition
- Issue Date
- May-2023
- Publisher
- John Wiley and Sons Inc
- Keywords
- atomic layer deposition; cation composition; indium gallium oxide; Oxide semiconductor; thin-film transistor
- Citation
- Digest of Technical Papers - SID International Symposium, v.54, no.1, pp.1826 - 1828
- Indexed
- SCOPUS
- Volume
- 54
- Number
- 1
- Start Page
- 1826
- End Page
- 1828
- ISSN
- 0097-966X
- Abstract
- We report the fabrication of high-performance indium-gallium oxide (IGO) thin-film transistors (TFTs) via plasma-enhanced atomic-layer-deposition (PE-ALD) process with cation composition ratio variation. With accurate control of the composition ratio, IGO(12:3) TFTs showed stable characteristics along with high field-effect mobility (μFET) of 70.69 cm2/Vs. Furthermore by increasing the gallium ratio, IGO(6:3) TFTs showed extremely stable characteristics with threshold voltage (VTH) variations lower than 0.1 V in both positive bias stress (PBS) and negative bias stress (NBS) conditions.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)