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Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor
- Authors
- Kim, Taikyu; Kim, Se Eun; Jeong, Jae Kyeong
- Issue Date
- Dec-2022
- Publisher
- International Display Workshops
- Keywords
- high mobility; hysteresis-free; p-type oxide semiconductor; thin-film transistor; tin monoxide
- Citation
- Proceedings of the International Display Workshops, v.29, pp.223 - 225
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 29
- Start Page
- 223
- End Page
- 225
- ISSN
- 1883-2490
- Abstract
- We demonstrate high mobility p-channel tin monoxide (SnO) thin-film transistors with hysteresis free-like behavior. Intermediate alumina encapsulation in the middle of two postdeposition annealing processes significantly facilitates crystal growth, enabling considerable intertwining between crystals. Here, we report a simple method crystallizing the SnO thin-film.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)