High performance a-InZnSnO thin-film transistor with a self-diffusion-barrier formable copper contact
- Authors
- Lee, Sang Ho; Oh, Dong Ju; Hwang, Ah Young; Park, Jong Wan; Jeong, Jae Kyeong
- Issue Date
- Sep-2017
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Amorphous indium tin zinc oxide; Copper-calcium alloy; High mobility; Thin-film transistors; Stability
- Citation
- THIN SOLID FILMS, v.637, pp.3 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 637
- Start Page
- 3
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19422
- DOI
- 10.1016/j.tsf.2017.03.014
- ISSN
- 0040-6090
- Abstract
- A low resistivity copper (Cu) film was used as a source/drain contact layer to fabricate high performance amorphous In-Zn-Sn-O (a-IZTO) thin-film transistors (TFTs). The calcium (Ca)-doped Cu films greatly simplified the conventional Cu/diffusion barrier stack structure and process, which allowed the production of promising aIZTO TFTs with a saturation mobility of 22.8 cm(2)/Vs and an ION/OFF ratio of 108. Furthermore, the a-IZTO TFTs with the Ca -doped Cu contact exhibited better gate bias thermal stress-induced stabilities than those with the pure Cu contact. This was attributed to the effective formation of a self-diffusion CuO. barrier at the Cu/IZTO interfaces.
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