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Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-stack Interlayer
- Issue Date
- Jun-2024
- Keywords
- Amorphous oxide semiconductor; IGTO; IGZO; specific contact resistivity; thin-film transistor
- Citation
- Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1490 - 1491
- Pages
- 2
- Indexed
- SCOPUS
- Volume
- 55
- Number
- 1
- Start Page
- 1490
- End Page
- 1491
- ISSN
- 0097-966X
2168-0159
- Abstract
- We report the effects of sputter-based multi-stack interlayer on the electrical contact properties of a-IGZO TFTs. The a-IGZO TFTs with a multi-stack interlayer of TiN and IGTO showed remarkable outcomes, including the lowest specific contact resistivity (ρC) and the highest field-effect mobility (μFET). This research suggests a highly effective approach to reduce the contact resistivity of oxide semiconductors by nearly two orders magnitude.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)