Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO
- Authors
- Lee, Seung-Hwan; Lee, Jung-Hoon; Choi, Seong-Jin; Park, Jin-Seong
- Issue Date
- Jul-2017
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Atomic layer deposition; Thermoelectrics; Ga doped ZnO; Thin films
- Citation
- CERAMICS INTERNATIONAL, v.43, no.10, pp.7784 - 7788
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 43
- Number
- 10
- Start Page
- 7784
- End Page
- 7788
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19558
- DOI
- 10.1016/j.ceramint.2017.03.087
- ISSN
- 0272-8842
- Abstract
- The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 degrees C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 mu V/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK².
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