High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties
- Authors
- Park, Jozeph; Oh, Keun-Tae; Kim, Dong-Hyun; Jeong, Hyun-Jun; Park, Yun Chang; Kim, Hyun-Suk; Park, Jin-Seong
- Issue Date
- Jun-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Mist - CVD; sol-gel process; zinc tin oxide; tin films transistors (tfts); solution process; atmospheric pressure
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.24, pp.20656 - 20663
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 24
- Start Page
- 20656
- End Page
- 20663
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19682
- DOI
- 10.1021/acsami.7b04235
- ISSN
- 1944-8244
- Abstract
- Zinc tin oxide (Zn-Sn-O, or ZTO) semiconductor layers were synthesized based on solution processes, of which one type involves the conventional spin coating method and the other is grown by mist chemical vapor deposition (mist-CVD). Liquid precursor solutions are used in each case, with tin chloride and zinc chloride (1:1) as solutes in solvent mixtures of acetone and deionized water. Mist-CVD ZTO films are mostly polycrystalline, while those synthesized by spin-coating are amorphous. Thin-film transistors based on mist-CVD ZTO active layers exhibit excellent electron transport properties with a saturation mobility of 14.6 cm²/(V s), which is superior to that of their spin-coated counterparts (6.88 cm²/(V s)). X-ray photoelectron spectroscopy (XPS) analyses suggest that the mist-CVD ZTO films contain relatively small amounts of oxygen vacancies and, hence, lower free-carrier concentrations. The enhanced electron mobility of mist-CVD ZTO is therefore anticipated to be associated with the electronic band structure, which is examined by X-ray absorption near-edge structure (XANES) analyses, rather than the density of electron carriers.
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