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First Demonstration of 3D Vertical Gate-All-Around (GAA) NAND Flash Memory Using ALD Ferroelectric HZO and IGO Channel
- Authors
- 최창환
- Issue Date
- 14-Feb-2023
- Place
- 정선 하이원 그랜드 호텔
- Conference Name
- 한국반도체학술대회 (KCS)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)