Thickness-dependent structure and properties of SnS₂ thin films prepared by atomic layer depositionThickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition
- Other Titles
- Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition
- Authors
- Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag
- Issue Date
- Mar-2017
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 56
- Number
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20518
- DOI
- 10.7567/JJAP.56.031201
- ISSN
- 0021-4922
- Abstract
- Tin disulfide (SnS₂) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS₂ were investigated as a function of the film thickness. SnS₂ exhibited a (001) hexagonal plane peak at 14.9 ° in the X-ray diffraction (XRD) results and an A(1g) peak at 311 cm⁻¹ in the Raman spectra. These results demonstrate that SnS₂ thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2nm. The crystallinity of the SnS₂ thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS₂ consisted of Sn⁴⁺ and S²⁻ valence states. Both the optical band gap and the transmittance of SnS₂ decreased as the film thickness increased. The band gap of SnS₂ decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS₂ decreased from 10¹¹ to 10⁶ Ω·cm as the film thickness increased.
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