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Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes
- Authors
- Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong
- Issue Date
- Feb-2025
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Ferroelectric (FE); heterostructure; HfxZr1−xO2 (HZO); metal–FE–metal (MFM); morphotropic phase boundary (MPB)
- Citation
- IEEE Transactions on Electron Devices, v.72, no.2, pp 635 - 639
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 72
- Number
- 2
- Start Page
- 635
- End Page
- 639
- ISSN
- 0018-9383
1557-9646
- Abstract
- We investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr1-xO2(HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (VO) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)