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Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics
- Authors
- An, Byung-Kwon; Kim, Seong-Beom; Song, Yun Heub
- Issue Date
- Feb-2020
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Ovonic threshold switch; OTS; phase change random access memory; PRAM; different electrode bottom size; switch characteristics
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.1, pp.8 - 11
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 20
- Number
- 1
- Start Page
- 8
- End Page
- 11
- ISSN
- 1598-1657
- Abstract
- In this paper, Effect of bottom electrode size on Ovonic Threshold Switch(OTS) characteristics has been investigated in W/SiTe/W selector device. We fabricated SiTe Ovonic Threshold Switch(OTS) with different bottom electrode contact totally 18 sizes (34 nm - 1921 nm) and studied the differences in the bottom electrode size I-V characteristics. Ovonic Threshold Switch(OTS) device showed on/off ratio (> 10(3)) and the difference in V-t value between 218 nm and 1414 nm size.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)