Nickel and Nickel Oxide Thin Films as Absorber Layer Materials of Extreme Ultraviolet Masks
- Authors
- Woo, Dong Gon; Kim, Jung Sik; Hong, Seongchul; Ahn, Jinho
- Issue Date
- Jan-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- EUV; Lithography; Mask; Nickel; Absorber Layer
- Citation
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.9, no.1, pp.20 - 23
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS
- Volume
- 9
- Number
- 1
- Start Page
- 20
- End Page
- 23
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21235
- DOI
- 10.1166/nnl.2017.2294
- ISSN
- 1941-4900
- Abstract
- We propose nickel and nickel oxide as absorber materials in extreme ultraviolet (EUV) masks in order to mitigate the shadowing effect caused by a combination of absorber pattern height and oblique incidence angle (theta = 6 degrees) of the EUV light. Since Ni-based materials have high extinction coefficients (k = 0.0549-0.07359), they exhibit lower EUV reflectivity than tantalum compounds that are widely studied as absorber materials for EUV mask. Therefore, EUV mask with a thinner Ni based absorber shows image contrast and normalized image log slope (NILS) comparable to those of a mask with a thicker Ta-based absorber. Further, the Ni-based absorber reduces horizontalvertical critical dimension (H-V CD) bias and show improved focus margin because of smaller CD variation with focus shift. Therefore, the lithographic process window can be enlarged by adopting Ni-based absorber.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21235)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.