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Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Vol 132, 245, 2026)Correction: Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Applied Physics A, (2026), 132, 4, (245), 10.1007/s00339-026-09450-0)
- Other Titles
- Correction: Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Applied Physics A, (2026), 132, 4, (245), 10.1007/s00339-026-09450-0)
- Authors
- Kim, Yunsoo; Jeong, Dongmin; Lee, Seungho; Kim, Bom-Sok; Kim, Myung-Jin; Lee, Taeho; Ahn, Jinho
- Issue Date
- Apr-2026
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.132, no.5, pp 1 - 1
- Pages
- 1
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 132
- Number
- 5
- Start Page
- 1
- End Page
- 1
- ISSN
- 0947-8396
1432-0630
- Abstract
- In this article Jinho Ahn should have been denoted as a corresponding author. The original article has been updated. © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2026.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)