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Suppression of boron diffusion using carbon co-implantation in DRAM
- Authors
- Lee, Suk Hun; Park, Se Geun; Kim, Shin Deuk; Jung, Hyuck-Chai; Kim, Il Gweon; Kang, Dong-Ho; Kim, Dae Jung; Lee, Kyu Pil; Choi, Joo Sun; Baek, Jung-Woo; Choi, Moonsuk; Park, Yongkook; Choi, Changhwan; Park, Jin-Hong
- Issue Date
- Oct-2016
- Publisher
- Pergamon Press Ltd.
- Keywords
- Semiconductor; Electronic materials; Diffusion; Defect; Electrical properties
- Citation
- Materials Research Bulletin, v.82, pp 22 - 25
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Materials Research Bulletin
- Volume
- 82
- Start Page
- 22
- End Page
- 25
- ISSN
- 0025-5408
1873-4227
- Abstract
- In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V-TH) was reduced by approximately 45 mV by Ge +C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)